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Samsung 990 EVO Plus 4TB PCIe 5.0 x2 NVMe M.2 2280 SSD
KEY FEATURES:
– 4TB Storage Capacity
– 990 EVO Plus
– M.2 2280 Form Factor
– NVMe 2.0 PCI-Express 4.0 x4 / 5.0 x2 Interface
– Up to 7,250MB/s Sequential Read Speed
– Up to 6,300MB/s Sequential Write Speed
– Up to 1.5 Million Hours Reliability (MTBF)
– AES 256-Bit Encryption
– Samsung V-NAND TLC Flash
– SMART & TRIM Support
– Auto Garbage Collection Algorithm
– 5 Year Limited Warranty or 2400 TBW
Description
Samsung 990 EVO Plus 4TB PCIe 5.0 x2 NVMe M.2 2280 SSD
MZ-V9S4T0BW
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software’s optimisation tools ensure the best SSD performance. It’s a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.
Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.
SPECIFICATIONS | |
| Brand | Samsung |
| Series | Solid State Disks |
| Model | MZ-V9S4T0BW |
| Interface | PCIe 4.0 x4 / 5.0 x2 NVMe 2.0 |
| Capacity | 4TB |
| Controller | Samsung in-house Controller |
| NAND Flash Memory | Samsung V-NAND TLC |
| Cache Memory | HMB (Host Memory Buffer) |
| Dimension | Max 80.15 x Max 22.15 x Max 2.38 (mm) |
| Form Factor | M.2 (2280) |
| Sequential Read | 7,250MB/s |
| Sequential Write | 6,300MB/s |
| Random Read | 1050K IOPS |
| Random Write | 1,400K IOPS |
| Power Consumption | |
| Read (Active) | 4.3W |
| Write (Active) | 4.2W |
| Idle PS3 | 60mW |
| Idle PS4 | 5 mW |
| Operating Temp. | 0°C to 70°C (Measured by S.M.A.R.T. Temperature; Proper airflow recommended) |
| Non-Operating Temp. | -40°C to 85°C |
| Humidity | 5% to 95% non-condensing |
| Shock (Non-Operating) | 1,500G(Gravity), duration: 0.5ms, 3 axis |
| Vibration (Non-Operating) | 20~2,000Hz, 20G |
| MTBF | 1.5 million hours |
| Warranty Information | |
| Warranty | 5 Year Or 2400TBW |
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